2N7002T n-channel enhancement mosfet elektronische bauelemente 10-jun-2010 rev. b page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? high density cell design for low r ds(on) . ? voltage controlled small signal switch. ? rugged and reliable. ? high saturation current capability. device marking k72 maximum ratings (t a =25 unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 60 v drain current i d 115 ma power dissipation p d 150 mw operating junction temperature range t j 150 c operating storage temperature range t stg -55~150 c ref. millimete r ref. millimete r min. max. min. max. a 1.50 1.70 k 0.30 0.50 b 0.75 0.95 m --- 10 o c 0.60 0.80 n --- 10 o d 0.23 0.33 s 1.50 1.70 g 0.50bsc j 0.10 0.20 so t -523 ? ? gate ? ? source ? ? drain
2N7002T n-channel enhancement mosfet elektronische bauelemente 10-jun-2010 rev. b page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) characteristics symbol min typ ma x unit test conditions drain-source breakdown voltage v (br)dss 60 - - v v gs = 0v, i d = 10 a gate threshold voltage v gs(th) 1 - 2.5 v v ds = v gs , i d = 250 a gate-body leakage i gss - - 80 na v ds = 0v, v gs = 25v zero gate voltage drain current i dss - - 80 na v ds = 60v, v gs = 0v on-state drain current i d(on) 500 - - ma v gs = 10v, v ds = 7v drain-source on resistance r ds(on) 1 - 7.5 ? v gs = 10v, i d = 500ma 1 - 7.5 v gs = 5v, i d = 50ma forward transfer admittance gfs 80 - 500 ms v ds = 10v, i d = 200ma drain-source on voltage v ds(on) 0.5 - 3.75 v v gs = 10v, i d = 500ma 0.05 - 0.375 v gs = 5v, i d = 50ma diode forward voltage v sd 0.55 - 1.2 v i s = 115ma, v gs = 0v input capacitance c iss - - 50 pf v ds = 25v, v gs = 0v, f= 1mhz output capacitance c oss - - 25 reverse transfer capacitance c rss - - 5 switching time turn-on time t d(on) - - 20 ns v gen = 10v, v dd = 25v, i d = 500ma, r g = 25 ? , r l = 50 ? turn-off time t d(off) - - 40
2N7002T n-channel enhancement mosfet elektronische bauelemente 10-jun-2010 rev. b page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. typical characteristic curve
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